✦ LIBER ✦

Noise sources in silicon on insulator (SIMOX) MOSFET's

✍ Scribed by T. Elewa; B. Boukriss; H. Haddara; A. Chovet; S. Cristoloveanu

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 453 KB
Volume: 8
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(90)90285-f

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low frequency noise in silicon on insula

Low frequency noise in silicon on insulator MOSFET's: Experimental and numerical simulation results

✍ J. Jomaah; F. Balestra; G. Ghibaudo 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 353 KB

Hysteresis and critical phenomena in sil

Hysteresis and critical phenomena in silicon on insulator MOSFET's

✍ T. Ouisse; G. Ghibaudo; J. Brini; S. Cristoloveanu; G. Borel 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 180 KB

Interface coupling effects in thin silic

Interface coupling effects in thin silicon-on-insulator MOSFET's

✍ T. Ouisse; S. Cristoloveanu; T. Elewa; B. Boukriss; A. Chovet 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 526 KB

Several experiments converge to demonstrate the strong variation of the front channel properties with the substrate bias in thin film SOI-MOS structures. A model is proposed 'to explain the deformation of the transconductance shape and the variation of its maximum. A related second order effect cons

Adjustable confinement of the electron g

Adjustable confinement of the electron gas in dual-gate silicon-on-insulator mosfet's

✍ Sorin Cristoloveanu; Dimitris E. Ioannou 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 429 KB

Back-gate induced random telegraph signa

Back-gate induced random telegraph signal noise in fully-depleted silicon-on-insulator nMOSFETs

✍ E. Simoen; U. Magnusson; J. Vermeiren; C. Claeys 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 275 KB

Trends in silicon-on-insulator technolog

Trends in silicon-on-insulator technology

✍ Jean-Pierre Colinge 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 509 KB