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Noise parameter modeling for InP-based pseudomorphic HEMTs [InAlAs-InGaAs]

✍ Scribed by Ando, Y.; Cappy, A.; Marubashi, K.; Onda, K.; Miyamoto, H.; Kuzuhara, M.


Book ID
114536934
Publisher
IEEE
Year
1997
Tongue
English
Weight
302 KB
Volume
44
Category
Article
ISSN
0018-9383

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Carrier-concentration-dependent low-fiel
✍ Jyotika Jogi; Sujata Sen; Mridula Gupta; R. S. Gupta 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 168 KB

## Abstract A carrier‐concentration‐dependent low‐field‐mobility model for a lattice‐matched InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The dependence of mobility on carrier concentration affects the current–voltage characteristics, and also the gate–voltage dependenc