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Noise in microelectromechanical system resonators

โœ Scribed by Vig, J.R.; Yoonkee Kim


Book ID
121285684
Publisher
IEEE
Year
1999
Tongue
English
Weight
199 KB
Volume
46
Category
Article
ISSN
0885-3010

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We have fabricated a strain-sensing field-effect transistor (FET) from a GaAs/AlGaAs heterostructure containing a near surface two-dimensional electron gas. At 77 K the FET shows a typical transconductance of 30 ยตS and small signal drain-source resistance of 30 M . The charge noise has a flat spectr