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Noise and coherence properties of HHG for FEL seeding

✍ Scribed by B. Sheehy; J.A. Clarke; N.R. Thompson; B.W.J. McNeil; A. Gordon


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
664 KB
Volume
593
Category
Article
ISSN
0168-9002

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## Abstract An accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine