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Nitrogen ion energy dependencies of dielectric constants and compositions of barium carbide–barium nitrate mixed films deposited on silicon wafers by an ion beam assisted deposition technique

✍ Scribed by Katsuhiro Yokota; Yuuki Teramoto; Fumiyoshi Miyashita


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
604 KB
Volume
257
Category
Article
ISSN
0168-583X

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Thin BaTiO 3 films were deposited on thin TiN film covered Si wafers by ion beam assisted deposition comprising of two electron beam evaporators for evaporating Ti and BaCO 3 and an electron cyclotron resonance ion source for ionizing O 2 . Films deposited using 25 eV oxygen ion beams had many small