Nitrogen doping-mediated room-temperature ferromagnetism in insulating Co-doped SnO2 films
β Scribed by X.F. Liu; Javed Iqbal; S.L. Yang; B. He; R.H. Yu
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 281 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
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β¦ Synopsis
Co-doped SnO 2 films codoped with nitrogen (N) have been prepared by magnetron sputtering to investigate the effect of p-type defects on magnetic properties. The incorporation of N modifies the preferential growth orientation of the films. Multiple characterization techniques reveal that the incorporated Co 2+ and N 3Γ ions substitute for Sn 4+ and O 2Γ sites in SnO 2 lattice, respectively. As N concentration increases, the band gap of the films decreases because of the formation of Sn-N bond. Room-temperature ferromagnetism is observed in (Co, N)-codoped SnO 2 films, and the saturated magnetic moment is sensitive to the incorporated N concentration. The variations in the magnetic properties as a function of N concentration are discussed on the basis of bound magnetic polaron model.
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