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Nitrogen doped silicon films heavily boron implanted for MOS structures: Simulation and characterization

✍ Scribed by R. Mahamdi; F. Mansour; H. Bouridah; P. Temple-Boyer; E. Scheid; L. Jalabert

Book ID: 113810380
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 568 KB
Volume: 13
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2011.05.003

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