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Nitriding of bulk titanium and thin titanium films in a NH3 low pressure plasma

✍ Scribed by N. Laidani; J. Perriere; D. Lincot; A. Gicquel; J. Amouroux


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
376 KB
Volume
36
Category
Article
ISSN
0169-4332

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Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metalΒ±organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450 C to