Nitride intersubband devices: prospects and recent developments

✍ Scribed by Julien, F. H. ;Tchernycheva, M. ;Nevou, L. ;Doyennette, L. ;Colombelli, R. ;Warde, E. ;Guillot, F. ;Monroy, E.

• Book ID: 105364260
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 345 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674894

✦ Synopsis

Abstract

This paper reports on GaN/AlN light‐emitting devices relying on intersubband transitions. All samples have been grown by molecular beam epitaxy. We first present a systematic investigation of single or coupled GaN/AlN quantum wells grown by MBE. We then present the recent observation of strong ISB resonant enhancement of the second‐harmonic generation of 1μm radiation. We finally report on the first observation of ISB luminescence in GaN QWs, which opens new prospects for the realization of nitride unipolar lasers based on current injection or optical pumping. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)