Nitride intersubband devices: prospects
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Julien, F. H. ;Tchernycheva, M. ;Nevou, L. ;Doyennette, L. ;Colombelli, R. ;Ward
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Article
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2007
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John Wiley and Sons
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English
⚖ 345 KB
## Abstract This paper reports on GaN/AlN light‐emitting devices relying on intersubband transitions. All samples have been grown by molecular beam epitaxy. We first present a systematic investigation of single or coupled GaN/AlN quantum wells grown by MBE. We then present the recent observation of