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NiCuP and NiCoP as a diffusion barrier between an Al pad and a solder bump

✍ Scribed by Chwan-Ying Lee; Kwang-Lung Lin

Book ID
107864450
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
945 KB
Volume
239
Category
Article
ISSN
0040-6090

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A common metallization scheme for ohmic
A common metallization scheme for ohmic contacts to n-type and p-type GaAs: the AlNiSn system
✍ Krishnamachar Prasad 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 250 KB

Results are presented on the use of A1-Ni-Sn metallization system as a common metallization scheme to realize ohmic contacts to both p-type and n-type GaAs. The ohmic contacts yield a specific contact resistance in the range from 10 --~ to 10 -4 if2 cm 2 for both p-type and n-type GaAs. The presence