𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates

✍ Scribed by L. S. Yu; D. J. Qiao; Q. J. Xing; S. S. Lau; K. S. Boutros; J. M. Redwing


Book ID
126727159
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
343 KB
Volume
73
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Schottky barriers on n-GaN grown on SiC
✍ E. V. Kalinina; N. I. Kuznetsov; V. A. Dmitriev; K. G. Irvine; C. H. Carter πŸ“‚ Article πŸ“… 1996 πŸ› Springer US 🌐 English βš– 326 KB
Barrier inhomogeneities and electrical c
✍ PΓ©rez, R. ;Mestres, N. ;Montserrat, J. ;Tournier, D. ;Godignon, P. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 127 KB

## Abstract The analysis of β€œnonideal” behaviour in current–voltage characteristics of fabricated Schottky diodes on 4H–SiC is carried out. An accurate theoretical modelling of the effect of the presence of inhomogeneities on the electron transport across the metal‐semiconductor interface is applie