Development of interference lithography
โ
Yasuyuki Fukushima; Yuya Yamaguchi; Takafumi Iguchi; Takuro Urayama; Tetsuo Hara
๐
Article
๐
2011
๐
Elsevier Science
๐
English
โ 825 KB
An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25 nm node and below. The two-window transmission grating of 40 and 50 nm half pitch (hp) were fabricated with techniques of spattering, electron