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Next-generation lithography for 22 and 16 nm technology nodes and beyond

โœ Scribed by Banqiu Wu


Book ID
107359897
Publisher
Science in China Press (SCP)
Year
2011
Tongue
English
Weight
710 KB
Volume
54
Category
Article
ISSN
1674-733X

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Development of interference lithography
โœ Yasuyuki Fukushima; Yuya Yamaguchi; Takafumi Iguchi; Takuro Urayama; Tetsuo Hara ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 825 KB

An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25 nm node and below. The two-window transmission grating of 40 and 50 nm half pitch (hp) were fabricated with techniques of spattering, electron