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New semiconducting compounds of diamond type structure

✍ Scribed by C.H.L. Goodman; R.W. Douglas

Publisher
Elsevier Science
Year
1954
Weight
200 KB
Volume
20
Category
Article
ISSN
0031-8914

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✦ Synopsis

Rekombinationszentren und damit eine Verminderung dter Elektronenkonzentration im Leitungsband.

DaB tats~chlich eine solche Verminderung der Leitungselektronenkonzentration vorliegt und keine Abnahme der Bewegiichkeit den Effekt bedingt, wurde

πŸ“œ SIMILAR VOLUMES

Semiconducting half-Heusler and LiGaGe s
Semiconducting half-Heusler and LiGaGe structure type compounds
✍ Casper, Frederick ;Seshadri, Ram ;Felser, Claudia πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 580 KB

## Abstract Compounds with LiAlSi (half‐Heusler) and LiGaGe structure types have been investigated by means of band structure calculations. The LiAlSi structure type is known as the half‐Heusler structure type, whereas LiGaGe is a closely related hexagonal variant. A remarkable feature of some __XY