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New plasma chemistries for etching III–V compound semiconductors: Bl3and BBr3

✍ Scribed by Takeshi Maeda; Hyun Cho; Jin Hong; S. J. Pearton

Book ID
107458031
Publisher
Springer US
Year
1999
Tongue
English
Weight
773 KB
Volume
28
Category
Article
ISSN
0361-5235

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New dry-etch chemistries for III–V semic
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✍ S.J. Pearton; U.K. Chakrabarti; F. Ren; C.R. Abernathy; A. Katz; W.S. Hobson; C. 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 627 KB

For some dry etching applications in III-V semiconductors, such as via hole formation in InP substrates, the currently used plasma chemistries have etch rates that are too slow by up to a factor of 30. We report on the development of three new classes of discharge chemistries, namely C12-CH4-H2-Ar a