New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime

✍ Scribed by N. Lakhdar; F. Djeffal

• Book ID: 113800633
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 355 KB
• Volume: 52
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2011.11.014