A new dual-material (DM) gate design to improve the subthreshold behavior of deep submicron GaN-MESFETs

✍ Scribed by Nacereddine Lakhdar; Fayçal Djeffal; Zohir Dibi

• Book ID: 112181222
• Publisher: John Wiley and Sons
• Year: 2012
• Tongue: English
• Weight: 216 KB
• Volume: 9
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.201100071