New model for the characterization of bulk traps by current deep level transient spectroscopy in metal-oxide-semiconductor transistors

✍ Scribed by Bauza, D.; Ghibaudo, G.

• Book ID: 120589045
• Publisher: American Institute of Physics
• Year: 1991
• Tongue: English
• Weight: 832 KB
• Volume: 70
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.349267