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New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance

✍ Scribed by Hardtdegen, H. ;Kaluza, N. ;Sofer, Z. ;Cho, Y. S. ;Steins, R. ;Bay, H. L. ;Dikme, Y. ;Kalisch, H. ;Jansen, R. H ;Heuken, M. ;Strittmatter, A. ;Reißmann, L. ;Bimberg, D. ;Zettler, J.-T.

Book ID: 105363632
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 260 KB
Volume: 203
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200565313

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✦ Synopsis

Abstract

This paper reports on the in situ determination of the Al‐content in Al~x~ Ga~1–x~ N layers deposited by MOVPE on sapphire and silicon substrates by means of optical reflectance. The accuracy of the conventional in situ method which utilizes the dependence of the refractive index and the extinction coefficient on Al‐content is compared to that of the new dispersion approach. The limits and possibilities of the new approach will be discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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