A coupled I(V) and charge-pumping analys
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D. Goguenheim; A. Bravaix; D. Vuillaume; F. Mondon; Ph. Candelier; M. Jourdain;
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Article
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1997
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Elsevier Science
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English
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Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFETs after homogeneous FOWLER-NORDHEIM injections under high field stress (>9MV/cm) for both polarities and localized Hot-Carrier injections. Standard I(V) and high-frequency C(V) curves are used to m