Hole Transport in Polar Semiconductors
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M. Costato; C. Jacoboni; L. Reggiani
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Article
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1972
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John Wiley and Sons
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English
β 801 KB
## Abstract The transport properties of holes in cubic semiconductors have been studied with a Monte Carlo technique taking into account polar scattering within and between the two valence bands degenerate at __K__ = 0. The predominant pβlike symmetry of the valence band wave functions has been fou