Hole Transport in Polar Semiconductors

✍ Scribed by M. Costato; C. Jacoboni; L. Reggiani

• Publisher: John Wiley and Sons
• Year: 1972
• Tongue: English
• Weight: 801 KB
• Volume: 52
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220520215

✦ Synopsis

Abstract

The transport properties of holes in cubic semiconductors have been studied with a Monte Carlo technique taking into account polar scattering within and between the two valence bands degenerate at K = 0. The predominant p‐like symmetry of the valence band wave functions has been found to enhunce the polar ohmic mobility of about a factor two with respect to the case in which it is neglected. The comparison between theoretical results and experimental data evidences the dominant importance of polar scattering mechanism for a typical II‐VI compound (CdTe)in the region of temperatures between 100 and 400 °K. On the contrary, this scattering mechanism alone cannot explain the low field transport of a typical III‐V compound (GaAs) in the same temperature range, according to its lower ionicity.