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Near-ideal lasing with a uniform wiggler

✍ Scribed by Roger W. Warren; Jon E. Sollid; Donald W. Feldman; William E. Stein; W.Joel Johnson; Alex H. Lumpkin; John C. Goldstein

Book ID
103606293
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
959 KB
Volume
285
Category
Article
ISSN
0168-9002

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MOSFETs are increasingly used as power devices and an important requirement of such a device is its ability to withstand high voltage. Since many MOS transistors have planar configuration, it is essential that the actual breakdown voltage of a planar junction is made to reach the bulk breakdown volt