✦ LIBER ✦

Near-band gap luminescence at room temperature from dislocations in silicon

✍ Scribed by D.J. Stowe; S.A. Galloway; S. Senkader; Kanad Mallik; R.J. Falster; P.R. Wilshaw

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 251 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.09.155

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Intense interface luminescence in type I

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

✍ Konstantin Moiseev; Eduard Ivanov; Vyacheslav Romanov; Maya Mikhailova; Yury Yak 📂 Article 📅 2010 🏛 Elsevier 🌐 English ⚖ 294 KB

Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3-5 m at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on InAs surface. I-V characteristics behavior was discuss

Conductance oscillations near bonded int

Conductance oscillations near bonded interface in the ultra thin silicon-on-insulator layers at room temperature

✍ O.V. Naumova; I.V. Antonova; V.P. Popov; N.V. Sapognikova; Yu.V. Nastaushev; E.V 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 127 KB

The conductance oscillations have been observed at room temperature in the ultra thin silicon layers of the silicon-on-insulator structures prepared with the bonding and hydrogen slicing technology. An origin of the oscillations is attributed to a formation of tunnel barriers for one type of carrier