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Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe

✍ Scribed by A.L. Gurskii; I.P. Marko; V.N. Yuvchenko; G.P. Yablonskii; H. Hamadeh; W. Taudt; J. Söllner; H. Kalisch; M. Heuken


Book ID
108342477
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
382 KB
Volume
174
Category
Article
ISSN
0022-0248

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A comparative study of the photoluminescence, reflection, and photoluminescence excitation spectra of MBE-and MOVPE-grown nitrogen-doped ZnSe samples has been carried out. MOVPEgrown samples demonstrate impurity recombination via shallow donor states while MBE-grown samples show mainly recombination