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Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance

✍ Scribed by Constantino, M. E.; Navarro-Contreras, H.; Salazar-Hernández, B.; Vidal, M. A.; Lastras-Martı́nez, A.; López-López, M.; Hernández-Calderón, I.

Book ID
120966128
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
343 KB
Volume
86
Category
Article
ISSN
0021-8979

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## Abstract MnAs layers with 45 nm thickness were grown epitaxially on GaAs(001) substrates. Ellipsometry measurements were made in the spectral range 0.045 eV to 6 eV as a function of temperature (between –10 °C and 50 °C) at 70° of incidence. In this way the transition from the hexagonal α‐phase