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Near band-edge emission in strained MBE-grown ZnS

โœ Scribed by K.B. Ozanyan; L. May; J.E. Nicholls; J.H.C. Hogg; W.E. Hagston; B. Lunn; D.E. Ashenford


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
353 KB
Volume
159
Category
Article
ISSN
0022-0248

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A comparative study of the photoluminescence, reflection, and photoluminescence excitation spectra of MBE-and MOVPE-grown nitrogen-doped ZnSe samples has been carried out. MOVPEgrown samples demonstrate impurity recombination via shallow donor states while MBE-grown samples show mainly recombination