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Nd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

✍ Scribed by Runjin Gan; Fengmin Liu; Li Qi; Jizheng Wang

Book ID
117358220
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
392 KB
Volume
32
Category
Article
ISSN
0167-577X

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## Abstract The structural properties of carbon thin films synthesized under an atmosphere of nitrogen by means of electron beam evaporation were studied by Raman scattering spectroscopy. The electron beam evaporation technique is an important alternative to grown layers of this material with inter