Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

✍ Scribed by Zheng, J. X.; Ceder, G.; Maxisch, T.; Chim, W. K.; Choi, W. K.

• Book ID: 126829072
• Publisher: The American Physical Society
• Year: 2006
• Tongue: English
• Weight: 266 KB
• Volume: 73
• Category: Article
• ISSN: 1098-0121
• DOI: 10.1103/physrevb.73.104101