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Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

โœ Scribed by Zheng, J. X.; Ceder, G.; Maxisch, T.; Chim, W. K.; Choi, W. K.


Book ID
126829072
Publisher
The American Physical Society
Year
2006
Tongue
English
Weight
266 KB
Volume
73
Category
Article
ISSN
1098-0121

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