𝔖 Bobbio Scriptorium
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National semiconductor “Hard disk on a chip”

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
381 KB
Volume
26
Category
Article
ISSN
0026-2692

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Artificial Haldane gap material on a sem
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We show how nanostructuring of a metallic gate of a field-effect transistor (FET) converts the electron channel of an FET to an artificial Haldane chain with a gap in the energy spectrum. A specially designed gate structure creates a chain of triple quantum dot molecules. The electrons localized in