Artificial Haldane gap material on a semiconductor chip

✍ Scribed by Yun-Pil Shim; Anand Sharma; Chang-Yu Hsieh; Pawel Hawrylak

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 342 KB
• Volume: 150
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/j.ssc.2010.08.002

✦ Synopsis

We show how nanostructuring of a metallic gate of a field-effect transistor (FET) converts the electron channel of an FET to an artificial Haldane chain with a gap in the energy spectrum. A specially designed gate structure creates a chain of triple quantum dot molecules. The electrons localized in the molecules realize a spin-half Heisenberg chain with spin-spin interactions alternating between ferromagnetic and antiferromagnetic. The quantum state of an FET is a semiconductor implementation of an integer spinone antiferromagnetic Heisenberg chain with a unique correlated ground state and a finite energy gap, originally conjectured by Haldane.