Nanotechnology for Electronic Materials and Devices (Nanostructure Science and Technology)

✍ Scribed by Anatoli Korkin (editor), Evgeni Gusev (editor), Jan K. Labanowski (editor), Serge Luryi (editor)

• Publisher: Springer
• Year: 2006
• Tongue: English
• Leaves: 371
• Category: Library

✦ Synopsis

The high level of attention and interest of the global community to NANO science and technology to a large extent is linked to the GIGAntic challenges for the c- tinuing growth of information technology, which sparked an unprecedented level of interdisciplinary and international cooperation among industrial and academic researchers, companies, IT market rivals, and countries, including former political and military rivals . Microelectronics technologies have reached a new stage in their development: The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new ma- rials are being introduced into microelectronics manufacture at an unprecedented rate , and alternative technologies to mainstream complementary metal-oxide sem- conductors (CMOSs) are being considered . The very dynamic stage of science and technology related to the advanced and future electronics and photonics creates a growing gap between the large number of rapid publications and nanotechnology highlights in media on one side and fundamental understanding of underlying phenomena and an adequate evaluation of scientific discoveries and technological innovations on the other side. Writing a tutorial book on fundamentals of science and technology for electronics at this time is almost the same level of challenge as writing a history book during a revolution.

✦ Table of Contents

Title Page
Copyright Page
Preface
Table of contents
1 A Hybrid Route from CMOS to Nano and Molecular Electronics
1.1. INTRODUCTION
1.2. MICROELECTRONICS TOWARD THE NANO ERA
1.2.1. Moore's Laws and MOSFET Paradigm
1.2.2. The Menu of the Silicon Technology
1.2.2.1. Photolithography
1.2.2.2. Oxidation
1.2.2.3. Doping
1.2.2.4. Etching
1.2.2.5. Deposition
1.2.3. The Historical Evolution of Microelectronics
1.2.4. Trying to Sustain the Validity of the First Moore Law
1.2.5. Theoretical Limits of Computation
1.3. MOLECULAR ELECTRONICS
1.3.1. Molecules of Potential Interest for Molecular Electronics
1.3.1.1. Molecules Involving Internal Redox
1.3.1.2. Molecules Involving External Redox
1.3.2. Molecular Electronics Ex Novo
1.3.2.1. Supramolecular Systems as Simple Solid-State Devices
1.3.2.2. A Molecular Random Access Memory
1.3.3. Hybrid Routes to Molecular Electronics
1.3.3.1. An Opportunistic Approach
1.3.3.2. A Dedicated Approach
1.4. IMPLEMENTATION OF THE DEDICATED HYBRID ROUTE
1.4.1. Preparing the Host
1.4.1.1. The Spacer Patterning Technology
1.4.1.2. The Multispacer Patterning Technology
1.4.2. Inserting the Guest
1.4.3. Addressable Nanowires and the Nano-to-Lϊtho Link
1.4.4. Circuit and Process Architecture
1.5. READING AND WRITING MOLECULES AS QUANTUM PROCESSES
1.5.1. Conventional Flash Memory Devices
1.5.2. A Possible Molecular Flash Device
1.5.3. What Do We Measure Measuring Static 1 - V Characteristics of Single Molecules?
1.6. DESCRIBING SYSTEMS ON THE NANOMETRE LENGTH SCALE: BOTTOM-UP, TOP-DOWN, OR ANYTHING ELSE?
1.6.1. The Bottom-up Description of Nature
1.6.2. The Bottom-up Construction of Physical Theories
1.6.3. Anything Else?
1.7. CONCLUSIONS: PRELIMINARY, TENTATIVE, PROVISIONAL
REFERENCES
2 From SOI Basics to Nano-Size MOSFETs
2.1. INTRODUCTION
2.2. PRINCIPLES OF SOl TECHNOLOGY
2.3. SOl WAFER TECHNOLOGIES
2.3.1. Wafer Bonding
2.3.2. Unibond
2.3.3. Eltran
2.3.4. SIMOX
2.3.5. Other SOl Materials
2.4. SOl MOSFETS
2.4.1. Fully Depleted SOI MOSFETs
2.4.1.1. Threshold Voltage
2.4.1.2. Subthreshold Slope
2.4.1.3. Transconductance
2.4.1.4. Volume Inversion
2.4.1.5. Defect Coupling
2.4.1.6. Metastable Dip
2.4.2. Partially Depleted SOl MOSFETs
2.4.2.1. Kink Effect
2.4.2.2. Hysteresis and Latch
2.4.2.3. Parasitic Bipolar Transistor
2.4.2.4. Transient and History Effects
2.4.3 . Transition from Partial to Full Depletion
2.5. ELECTRICAL CHARACTERIZATION TECHNIQUES FOR SOI
2.5.1. Wafer Characterization: Ψ-MOSFET
2.5.2. MOSFET Characteristics
2.5.3. SIS and MOS Capacitance
2.5.4. Charge Pumping Technique
2.5.5. Low-Frequency Noise
2.5.6. Drain Current Transients
2.6. DIMENSIONAL EFFECTS IN SOl MOSFETs
2.6.1. Short Channels
2.6.2. Narrow Channels
2.6.3. Channel Thickness
2.6.3.1. Supercoupling
2.6.3.2. Mobility Issues
2.6.4. Ultrathin Gate Dielectric
2.6.5. Innovative Buried Insulators
2.7. MULTIPLE-GATE SOl MOSFETs
2.7.1. Double-Gate MOSFETs
2.7.2. Triple-Gate MOSFETs
2.7.3. Gate-All-Around MOSFETs
2.7.4. Four-Gate FET
2.8. CONCLUSIONS
REFERENCES
3 Strategies of Nanoscale Semiconductor Lasers
3.1. INTRODUCTION
3.1.1. Semiconductor Laser Fundamentals
3.1.1.1. Electrons in Semiconductor
3.1.1.2. Photons in Semiconductor
3.1.1.3. Semiconductor p-n Junction
3.1.2. The Scope
3.2. LASING FROM NANOSTRUCTURES: CARRIER CONFINEMENT
3.2.1. Greater Color Range
3.2.1.1. Spherical Nanocrystals: An Example
3.2.1.2. Quantum Confinement in One, Two, and Three dimensions
3.2.2. Higher Material Gain
3.2.2.1. Density of States
3.2.2.2. Material Gain
3.2.3. Lower Lasing Threshold
3.2.3.1 . Threshold Condition
3.2.3.2. Threshold Current Density
3.3. SEMICONDUCTOR LASER CAVITY STRUCTURES: PHOTON CONFINEMENT
3.3.1. Edge-Emitting Laser Cavity
3.3.2. Vertical Cavity Surface-Emitting Laser and Photonic Crystal Laser Cavity
3.3.3. Microdisk Laser Cavity
3.3.4. Nanowire Single-Crystal Laser Cavity
3.4.QUANTUM WELL LASERS
3.4.1. Quantum Well Fabrication Technologies
3.4.1.1. Molecular-Beam Epitaxy
3.4.1.2. Metal-Organic Chemical Vapor Deposition
3.4.2. Semiconductor Lasers Based on Quantum Wells
3.4.2.1. Quantum Well Lasers
3.4.2.2. Quantum Cascade Lasers
3.5. QUANTUM WIRE LASERS
3.5.1. Quantum Wire Fabrication Technologies
3.5.1.1. Nanoscale Lithography
3.5.1.2. Self-organization
3.5.1.3. Selective Growth on Prepatterned Substrates
3.5.1.4. Chemical (Bottom-up) Synthesis
3.5.2. Semiconductor Lasers Based on Quantum Wires
3.5.2.1. Lasers Based on Lithographically Defined Quantum Wires
3.5.2.2. Lasers Based on Self-organized Quantum Wires
3.5.2.3 . Lasers Based on Selective Grown Quantum Wires
3.5.2.4. Lasers Based on Chemically Synthesized Crystalline Quantum Wires
3.6. QUANTUM DOT LASERS
3.6.1. Quantum Dot Fabrication Technologies
3.6.1.1. Nanoscale Lithography
3.6.1.2. Self-organization
3.6.1.3. Chemical Synthesis
3.6.2. Semiconductor Lasers Based on Quantum Dots
3.6.2.1. Lasers Based on Lithographically Defined Quantum Dots
3.6.2.2. Lasers Based on Self-organized Quantum Dots
3.6.2.3. Lasers Based on Chemically Synthesized Quantum Dots
3.7. PERSPECTIVES
REFERENCES
4 Silicon Nanocrystal Nonvolatile Memory
4.1. INTRODUCTION
4.2. NANOCRYSTAL MEMORY DEVICE PHYSICS
4.3. NANOCRYSTAL ENGINEERING
4.4. NVM BITCELL CHARACTERISTICS
4.5.MEMORY ARRAY FABRICATION ANDCHARACTERIZATION
4.6. SUMMARY
REFERENCES
5 Novel Dielectric Materials for Future Transistor Generations
5.1. INTRODUCTION
5.2.WHY k VALUES OF HIGH-k MATERIALS ARE HIGH
5.3. CHOICE OF MATERIALS
5.4. EFFECTS OF ELECTRON TRAPPING
5.5. STRUCTURAL PROPERTIES OF GATE STACK AND MOBILITY DEGRADATION
5.6 . CONCLUSION
REFERENCES
6 Scanning Force Microscopies for Imaging and Characterization of Nanastructured Materials
6.1.INTRODUCTION
6.2. SCANNING PROBE MICROSCOPY
1. The very end of the tip apex must be atomically sharp.
2. The tip-sample interaction used for sensing must rapidly decrease with increasing separation distance.
3. The interaction must change by an amount easily measurable during scanning of the tip above or on the sample surface.
4. For efficient performance of the feedback loop, the dependence of the interaction on the distance should be monotonic, at least within a certain range.
6.3. MODES OF SPM OPERATION
6.4. SCANNING TUNNELING MICROSCOPY
6.4.1. Tunneling Effect
6.4.2. Examples of STM Imaging
6.5. ATOMIC FORCE MICROSCOPY
6.5.1. Contact AFM
6.5.2. Dynamic Force Microscopy
6.5.3. Detection of the Cantilever Vibrations
6.5.4. Tip-Surface Interaction of a Vibrating Cantilever
6.5.5. Tip-Surface Interaction Forces
6.5.6. Dynamic Force Microscopy for Ionic Insulator Surfaces
6.5.7. Dynamic Force Microscopy of AIII-BV Semiconductor Surfaces
6.5.8. Chemical Sensing with DFM
6.6. KELVIN PROBE FORCE MICROSCOPY
6.7. CONCLUSIONS
REFERENCES
7 Simulation of Nano-CMOS Devices: From Atoms to Architecture
7.1. INTRODUCTION
7.2. UNDERSTANDING REQUIRES NUMERICAL SIMULATION
7.3. SOURCES OF INTRINSIC PARAMETER FLUCTUATIONS
7.3.1. Random Discrete Dopants
7.3.2. Line-Edge Roughness
7.3.3. Oxide Thickness Fluctuations
7.4. METHODOLOGY
7.4.1. Density Gradient in Drift-Diffusion Simulations
7.4.2. Boundary Conditions for Density Gradient
7.4.2.1 . Dirichlet Boundary Conditions
7.4.2.2 . Neumann Boundary Conditions
7.4.2.3. Si/SiO2 Interface Boundary Conditions
7.5. PROBLEMS IN CLASSICAL SIMULATIONS
7.5.1. Charge Localization
7.5.2. "Atomistic" Resistor Study
7.5.3. Quantum Corrections
7.5.4. Mesh Sensitivity
7.5.5. DG Corrections for Holes
7.6.AB INITIO COULOMB SCATTERING IN MONTE CARLO SIMULATIONS
7.6.1. Simulation Methodology
7.6.2. Percentage Change in Current
7.6.2 .1. Device 3
7.6.2.2. Device 5
7.6.2.3. Device 11
7.6.3. Conclusions on Ab Initio Coulomb Scattering
7.7. IMPACT OF INTRINSIC PARAMETER FLUCTUATION ON CIRCUITS AND SYSTEMS
7.7.1. Statistical Compact Modeling
7.7.2. Extraction Results
7.7.3. Impact of Intrinsic Parameter Fluctuation on 6-T SRAM
7.7.4. Conclusions on Fluctuation in Circuits and Systems
7.8.CONCLUSIONS
REFERENCES
8 Lattice Polarons and Switching in Molecular Nanowires and Quantum Dots
8.1. INTRODUCTION
8.2. STRONG- AND WEAK-COUPLING CONTINUOUS POLARONS
8.2.1. Variational Approach
8.2.2. Effective Mass of a Continuous Strong-Coupling Polaron
8.2.3. Weak-Coupling (Fröhlich) Polaron
8.3. SMALL (LATIICE) POLARON
8.3.1. Holstein Model
8.3.2. Nonadiabatic Small Polaron
8.3.3. Adiabatic Small Polaron
8.3.4. Electron-phonon and Coulomb Interactions in Wannier Representation
8.3.5. Polaron Band
8.3.6. From Continuous to Small Holstein and Small Fröhlich Polarons: QMC Simulation
8.4. ATTRACTIVE CORRELATIONS OF SMALL POLARONS
8.5. MOLECULAR SWITCHING: NEGATIVE-U HUBBARD MODEL
8.5.1. Steady Current Through MQDs
8.5.2. MQD Green's Function and Rate Equation
8.5.3. Switching Effect
8.6. POLARONIC SWITCHING
8.6.1. MQD Density of States: Correlation and Phonon Side Bands
8.6.2. Nonlinear Rate Equation and Switching
8.7. CONCLUSION
REFERENCES
Index