In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al 2 O 3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.
Nanoscale effects in devices based on chalcogenide solid solutions
β Scribed by M.N Kozicki; M Yun; S.-J Yang; J.P Aberouette; J.P Bird
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 1022 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
Solid solutions of metals such as silver in arsenic trisulfide exhibit a variety of interesting characteristics, including the ability to bring the metal out of solution by electrodeposition. This allows voltage-controlled switching characteristics to be realized in two terminal devices which may be fabricated to nanoscale dimensions. In addition, surface electrodeposits may be formed and subsequently broken at grain boundaries to create structures that have adjustable current-voltage characteristics at low temperatures. This paper highlights some initial results of the characterization of nanoscale structures based on such solid solutions.
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