Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers

✍ Scribed by I.E. Tyschenko; M. Voelskow; A.G. Cherkov; V.P. Popov

• Book ID: 108224483
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 481 KB
• Volume: 267
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2009.01.142