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Nanometer-scale Si selective growth on Ga-adsorbed voids in ultrathin SiO2 films

โœ Scribed by Yoshiki Nitta; Motoshi Shibata; Ken Fujita; Masakazu Ichikawa


Book ID
117219685
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
498 KB
Volume
431
Category
Article
ISSN
0039-6028

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Preparation of nanometer-scale windows i
โœ J.W.H. Maes; P.W. Lukey; T. Zijlstra; C. Visser; J. Caro; E.W.J.M. van der Drift ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 295 KB

Three methods are presented for preparation of windows in SiO 2 for selective epitaxial growth of Si based devices. The window patterns are defined using e-beam lithography and the structures are grown with chemical vapour deposition or molecular beam epitaxy. One method is based on wet etching; the