Preparation of nanometer-scale windows in SiO2 for selective epitaxial growth of Si based devices

✍ Scribed by J.W.H. Maes; P.W. Lukey; T. Zijlstra; C. Visser; J. Caro; E.W.J.M. van der Drift; F.D. Tichelaar; S. Radelaar

• Book ID: 104306299
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 295 KB
• Volume: 35
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00143-8

✦ Synopsis

Three methods are presented for preparation of windows in SiO 2 for selective epitaxial growth of Si based devices. The window patterns are defined using e-beam lithography and the structures are grown with chemical vapour deposition or molecular beam epitaxy. One method is based on wet etching; the other two are based on reactive ion etching. The resulting window sizes and quality of epitaxial growth are evaluated using transmission electron microscopy of grown structures. Each of the techniques results in high quality selective epitaxial growth. With a new post-etching treatment in a C12 plasma high quality growth is demonstrated in windows as small as 46 nm.