Electron beam lithography for nanometer-
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W. Weber; G. Ilicali; J. Kretz; L. Dreeskornfeld; W. RΓΆsner; W. Hansch; L. Risch
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Article
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2005
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Elsevier Science
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English
β 640 KB
Double-gate transistors are promising successors to conventional bulk MOSFETs, since their gate arrangement limits short channel effects yielding better device performance, even at nanometer size gate lengths. An electron beam lithography process for patterning and aligning the nanometer-size gates