Ultrahigh-vacuum dual-target reactive magnetron sputtering, in a mixed Ar/N 2 discharge was used to deposit epitaxial single-crystal MAX phase Ti 2 AlN(0 0 0 1) thin films, without seed layers, onto Al 2 O 3 (0 0 0 1) substrates kept at 1050 Β°C. By varying the N 2 partial pressure a narrow process w
β¦ LIBER β¦
Nanomechanical properties of AlN(1 0 3) thin films by nanoindentation
β Scribed by Sheng-Rui Jian; Guo-Ju Chen; Jason S.-C. Jang; Yi-Shao Lai
- Book ID
- 116606022
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 381 KB
- Volume
- 494
- Category
- Article
- ISSN
- 0925-8388
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