## Abstract The structural and optical properties of porous silicon (PS) layers prepared by Vapour‐Etching (VE) of moderately and heavily boron‐doped Si substrates are investigated. The VE technique produces rough PS layers that are essentially formed of interconnected cluster‐like structures. Opti
Nano-structuring of silicon and porous silicon by photo-etching using near field optics
✍ Scribed by Diesinger, H. ;Bsiesy, A. ;Hérino, R.
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 243 KB
- Volume
- 197
- Category
- Article
- ISSN
- 0031-8965
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