✦ LIBER ✦

Nano-confined and copper-defect in wide-bandgap semiconductors

✍ Scribed by M. Idrish Miah

Book ID: 113831027
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 291 KB
Volume: 284
Category: Article
ISSN: 0030-4018
DOI: 10.1016/j.optcom.2011.07.004

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

(Invited) Crystal Defects in Wide Bandga

(Invited) Crystal Defects in Wide Bandgap Semiconductors

✍ Shenai, K.; Christou, A.; Dudley, M.; Ragothamachar, B.; Singh, R. 📂 Article 📅 2014 🏛 The Electrochemical Society 🌐 English ⚖ 484 KB

Excitonic waveguiding and lasing in wide

Excitonic waveguiding and lasing in wide bandgap semiconductor

✍ N. N. Ledentsov 📂 Article 📅 1998 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 200 KB

Ultrafast spin dynamics in magnetic wide

Ultrafast spin dynamics in magnetic wide-bandgap semiconductors

✍ Raskin, Maxim; Stiehm, Torsten; Cohn, Alicia W.; Whitaker, Kelly M.; Ochsenbein, 📂 Article 📅 2014 🏛 John Wiley and Sons 🌐 English ⚖ 820 KB

Progress in Wide Bandgap Ferromagnetic S

Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides

✍ S. J. Pearton; C. R. Abernathy; G. T. Thaler; R. M. Frazier; Y. H. Heo; M. Ivill 📂 Article 📅 2005 🏛 John Wiley and Sons ⚖ 8 KB

High-Field Transport and Impact Ionizati

High-Field Transport and Impact Ionization in Wide Bandgap Semiconductors

✍ M. Reigrotzki; M. Dür; W. Schattke; N. Fitzer; R. Redmer; St.M. Goodnick 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 136 KB

Optical and Structural Properties of Qua

Optical and Structural Properties of Quantum Dots in Wide-Bandgap Semiconductors

✍ Strassburg, M. ;Hoffmann, A. ;Krestnikov, I.L. ;Ledentsov, N.N. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 129 KB 👁 2 views

The optical and structural properties of ultrathin insertions in wide-bandgap semiconductors are studied. Structural investigations confirm that in nitride-based structures indium fluctuations lead to the formation of nano-islands. The zero-dimensional character in nitride-and II-VI-based quantum do