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N-Type Porous Silicon Substrates for Integrated RF Inductors

✍ Scribed by Capelle, M.; Billoue, J.; Poveda, P.; Gautier, G.

Book ID
114620676
Publisher
IEEE
Year
2011
Tongue
English
Weight
375 KB
Volume
58
Category
Article
ISSN
0018-9383

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Porous silicon (PS) prepared from n-type Si crystal is proposed as a new material for the fabrication of sensitive substrates for surface-enhanced Raman scattering (SERS). The formation procedure for nanostructured silver films on the surface of PS was optimized. Maximum of SERS enhancement for rhod