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n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine

✍ Scribed by Nishimori, Toshihiko; Nakano, Koji; Sakamoto, Hitoshi; Takakuwa, Yuji; Kono, Shozo

Book ID: 121799377
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 361 KB
Volume: 71
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.119922

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