✦ LIBER ✦

n-GaAs Schottky diodes metallized with Ti and Pt/Ti

✍ Scribed by A.K. Sinha; T.E. Smith; M.H. Read; J.M. Poate

Publisher: Elsevier Science
Year: 1976
Tongue: English
Weight: 409 KB
Volume: 19
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(76)90012-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-ray diffraction and I-V curve studies

X-ray diffraction and I-V curve studies on the Al/Ti/Al/n-GaAs Schottky contact after annealing at various temperatures

✍ Jiann-Ruey Chen; Nai-Luon Chang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 274 KB

Effect of Ti content on microstructure a

Effect of Ti content on microstructure and strength of Si3N4/Si3N4 joints brazed with Cu–Pd–Ti filler metals

✍ C.F. Liu; J. Zhang; Y. Zhou; Q.C. Meng; M. Naka 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 655 KB

A novel Cu-Pd-Ti filler alloy was adopted to braze silicon nitride ceramic to itself in the form of Cu/(Ti, Pd)/Cu. The reliable Si 3 N 4 joints were obtained. The effect of Ti content on the microstructure and properties of the Si 3 N 4 joints was investigated using EPMA, SEM and three-point bendin

Reduction of (μ2-Te2)Fe2(CO)6 and reacti

Reduction of (μ2-Te2)Fe2(CO)6 and reaction of the dianion formed with metal dihalides, L2MCl2, (L = PPh3, M = Pt, Pd, Ni; L = C5H5, M = Ti; L = Me, n-Bu, M = Sn)

✍ Pradeep Mathur; V.Dayal Reddy 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 405 KB

7604. Au/Pt/Ti contacts to p-In0.53Ga0.4

7604. Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing: A Katz et al,J Appl. Phys,68, 1990, 1123–1128

📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 151 KB