Multiscale simulation of silicon film growth
β Scribed by C. Cavallotti; E. Pantano; A. Veneroni; M. Masi
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 406 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0232-1300
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π SIMILAR VOLUMES
This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemente
thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order