Multiple quantum-dot infrared phototransistors
โ Scribed by V. Ryzhii; M. Ershov; I. Khmyrova; M. Ryzhii; T. Iizuka
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 258 KB
- Volume
- 227
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A Si/SiGe HBT-type phototransistor with 10 Ge-dot layers (8ML in each layer, separated by 30 nm Si spacer) incorporated in the base-collector junction was grown by UHV-CVD. To achieve low dark current density and high photo-responsivity, a high-low emitter profile consisting of a heavily doped polys
## Abstract Quantum dot infrared photodetectors (QDIPs) have made significant progress after their early demonstration about a decade ago. We review the progress made by QDIP technology over the last few years and compare QDIPs with quantum well infrared photodetectors (QWIPs). It is shown that the