Photoluminescence measurements of GaAs g
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M. Ciorga; L. Bryja; J. Misiewicz; R. Paszkiewicz; M. Panek; B. Paszkiewicz; M.
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Article
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1998
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John Wiley and Sons
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English
โ 102 KB
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Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was