Multi-run Memory Tests for Pattern Sensitive Faults

✍ Scribed by Ireneusz Mrozek

• Publisher: Springer International Publishing
• Year: 2019
• Tongue: English
• Leaves: 142
• Edition: 1st ed.
• Category: Library

✦ Synopsis

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

• Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  
• Presents practical algorithms for design and implementation of efficient multi-run tests;
  
• Demonstrates methods verified by analytical and experimental investigations.
  

✦ Table of Contents

Front Matter ....Pages i-x
Introduction to Digital Memory (Ireneusz Mrozek)....Pages 1-4
Basics of Functional RAM Testing (Ireneusz Mrozek)....Pages 5-13
Multi-Cell Faults (Ireneusz Mrozek)....Pages 15-28
Controlled Random Testing (Ireneusz Mrozek)....Pages 29-36
Multi-Run Tests Based on Background Changing (Ireneusz Mrozek)....Pages 37-62
Multi-Run Tests Based on Address Changing (Ireneusz Mrozek)....Pages 63-85
Multiple Controlled Random Testing (Ireneusz Mrozek)....Pages 87-100
Pseudo-Exhaustive Testing Based on March Tests (Ireneusz Mrozek)....Pages 101-120
Back Matter ....Pages 121-135

✦ Subjects

Engineering; Circuits and Systems; Processor Architectures; Electronics and Microelectronics, Instrumentation