𝔖 Bobbio Scriptorium

✦ LIBER ✦

Mud ridge on the crest of the outer swell off Japan Trench

✍ Scribed by Y. Ogawa; K. Kobayashi

Book ID: 103260877
Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 541 KB
Volume: 111
Category: Article
ISSN: 0025-3227
DOI: 10.1016/0025-3227(93)90184-w

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Studies on the detailed crustal structur

Studies on the detailed crustal structure of the trench-trench-trench triple junction off southeast Japan

✍ H. Kinoshita; Y. Hamamo; A. Uchiyama 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 778 KB

Possible submarine tsunami deposits on t

Possible submarine tsunami deposits on the outer shelf of Sendai Bay, Japan resulting from the 2011 earthquake and tsunami off the Pacific coast of Tohoku

✍ Ikehara, Ken; Irino, Tomohisa; Usami, Kazuko; Jenkins, Robert; Omura, Akiko; Ash 📂 Article 📅 2014 🏛 Elsevier Science 🌐 English ⚖ 543 KB

Transition from frontal accretion to und

Transition from frontal accretion to underplating in a part of the Nankai Trough accretionary complex off Shikoku (SW Japan) and extensional features on the lower trench slope

📂 Article 📅 1985 🏛 Elsevier Science ⚖ 101 KB

[Inst. Electr. Eng. Japan International

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A design concept for the low turn-off loss 4.5 kV trench IGBT

✍ Takahashi, T.; Uenishi, A.; Kusunoki, S.; Minato, T.; Nakamura, H.; Aono, S.; Na 📂 Article 📅 1998 🏛 Inst. Electr. Eng. Japan 🌐 English ⚖ 374 KB

[Inst. Electr. Eng. Japan 13th Internati

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Soft-switching turn-off characterization at high temperature of 1200 V trench IGBT using local lifetime control

✍ Azzopardi, S.; Kawamura, A.; Iwamoto, H. 📂 Article 📅 2001 🏛 Inst. Electr. Eng. Japan 🌐 Japanese ⚖ 456 KB