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MOVPE growth of thick CdTe heteroepitaxial layers for X-ray imaging detectors

✍ Scribed by M. Niraula; K. Yasuda; K. Uchida; Y. Nakanishi; T. Mabuchi; Y. Agata

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
118 KB
Volume
1
Category
Article
ISSN
1862-6351

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## Abstract We report on the atmospheric pressure metalorganic vapour phase epitaxy of both nominally undoped and iodine (I) donor doped CdTe layers on high resistivity (111)B CdTe substrates, as a preliminary step towards the fabrication of p‐i‐n diode X‐ray detectors. CdTe epilayers were grown at