Self-assembled growth of InAs-quantum do
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T Kita; K Tachikawa; H Tango; K Yamashita; T Nishino
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Article
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2000
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Elsevier Science
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English
⚖ 136 KB
Initial stages of self-assembled growth of InAs dots on GaAs 001 and a postgrowth evolution of the deposited surface Ž . Ž . have been investigated by reflectance-difference RD spectroscopy and reflection high-energy electron diffraction RHEED . Ž . A significant change in the RD spectrum occurs e